CV Sveinn Ólafsson

Name: Sveinn Ólafsson
Date of birth: 25 january 1961.
Civil status: Married (three children)
Nationality: Icelandic
Languages: Swedish, English and some skill in German and Japanese

Research Professor of Physics Science Institute University of Iceland. Conducting research on growth of thin films by sputtering in general and hydrogen interactions in thin films and superlattices. Instrument evelopment, growth of nano-structured materials with STM and MBE growth of semiconductors. Surface science work at MaxLab Laboratory Lund Sweden and defects studies of semiconductors at ISOLDE lab CERN Switzerland       .

C.S.     Electronic Engineering June 1984. University of Iceland
B.Sc.     Physics June 1986. University of Iceland
PhD.    Doctoral Dissertation 23. May 1995 Uppsala University in Physics

Japan: Monbusho scholarship  1985-1987.  Japan Educational Ministry.
Intensive course in Japanese 1985-1986 Hokkaido University Japan
Research work: Muroran University FET transistors using anodic oxidisation of SiO2.

Iceland: Research Engineer 1987-1988. Assisting Prof. Haflidi Gíslason Science Institute of University of Iceland to build a research lab in studying defects in semiconductors.

Sweden Uppsala: PhD student 1989-1995  Uppsala University.
PhD thesis: Hydrogen interactions in thin metallic films.
Doctoral Dissertation 23. May 1995 Supervisor Prof. Erik Karlsson
Post Doc 1995-1998 Thin film research group IFM Linköping University Sweden

Senior reseach scientist 1998-2006 - Science Institute University of Iceland
Research Professor of Physics 2006 - Science Institute University of Iceland
Teaching at Univerity of Iceland since 1998
Supervising or co-supervising 6 PhD students and a number of masters students.
Chairman of the Icelandic physical society 2008-2013

Icelandic member of  the domain committee;  Materials, Physics and Nanosciences (MPNS) in the EU COST program.